Question

When an external voltage V is applied across a semiconductor diode such that p-side is connected to the positive terminal of the battery and the n-side to the negative terminal, it is said to be:
A) Reverse bias
B) Forward bias
C) Bias free
D) None of these

Answer 1

Hint: When a PN semiconductor is fused into an N-type semi-conductive, a potentially barrier voltage would be generated across the diode link. The Forward biased junctions have small depletion zones however the reverse biased junctions have large depletion zones.

Complete step by step solution:
One of the simplest semiconductor devices around, a P-N junction diode has the feature of passing current in only one direction. But as the diode has an exponential current-voltage ratio, a diode does not agree linearly with the voltage applied, so we cannot define its functioning simply by applying an equation like the Ohm's law. When a sufficient positive voltage is applied between two ends of the P-N interchange, free electrons and holes may be supplied with extra energy needed to cross the interchange, as the depletion layer diameter across the P-N interchange reduces. The reverse stress allows the free charges to be taken off the junction, which raises the thickness of the depletion plate. This increases or decreases the effective resistance of the intersection itself that permits or prevents current flow through the p-n-connection of diodes.

Forward bias is one of which the p-side of the diode binds to the battery's positive side and the diode's n-side to the battery's negative terminal.

Hence the correct option is (B).

Note: As the Zero Bias diode is paired, no additional potential energy is used at the P-N crossing. However, if the terminals of the diodes are shortened jointly, the jumper with this barrier potential moves through a few holes (most carriers) within the P-type material with enough energy to overcome it. This is called Forward Current.