Answer
348.9k+ views
Hint: Before answering this question, we should know that GaAs is a Gallium arsenide which is a semiconductor that belongs to III-V direct bandgap with a zinc blende structure. The oxidation state of gallium in the compound is +3.
Complete answer:
It has various applications: manufacture of devices like microwave frequency integrated circuits, infrared LED, laser diodes, solar cells, and also optical windows.
The epitaxial growth of III-V semiconductors is often done by GaAs, it is used as a substrate material for this purpose, it includes indium gallium arsenide, aluminum gallium arsenide, and others.
Preparation:
The single crystals of gallium arsenide are prepared by three industrial processes:
The VGF process ( Vertical gradient freeze) is used to produce most GaAs wafers.
The Bridgman-Stockburger technique is used in crystal growth using a horizontal zone furnace where gallium and arsenic vapors react and the free molecules deposit on a seed crystal at the cooler end of the furnace.
LEC (Liquid encapsulated czochralski) is used for the production of high purity single crystals that performs semi-insulating characteristics.
The advantages of the Gallium arsenide are:
It has low resistance.
It has low off capacitance.
It has high linearity at high frequencies.
It has higher electron mobility.
It has a higher saturated electron velocity.
Note:
Other Applications of Gallium arsenide are:
GaAs transistors are used in wireless communications, in mobile phones.
It is also a vital semiconductor material for highly efficient and cost solar cells.
It is used to produce near-infrared laser diodes.
It is also used as an oxidizing agent in industries.
Complete answer:
It has various applications: manufacture of devices like microwave frequency integrated circuits, infrared LED, laser diodes, solar cells, and also optical windows.
The epitaxial growth of III-V semiconductors is often done by GaAs, it is used as a substrate material for this purpose, it includes indium gallium arsenide, aluminum gallium arsenide, and others.
Preparation:
The single crystals of gallium arsenide are prepared by three industrial processes:
The VGF process ( Vertical gradient freeze) is used to produce most GaAs wafers.
The Bridgman-Stockburger technique is used in crystal growth using a horizontal zone furnace where gallium and arsenic vapors react and the free molecules deposit on a seed crystal at the cooler end of the furnace.
LEC (Liquid encapsulated czochralski) is used for the production of high purity single crystals that performs semi-insulating characteristics.
The advantages of the Gallium arsenide are:
It has low resistance.
It has low off capacitance.
It has high linearity at high frequencies.
It has higher electron mobility.
It has a higher saturated electron velocity.
Note:
Other Applications of Gallium arsenide are:
GaAs transistors are used in wireless communications, in mobile phones.
It is also a vital semiconductor material for highly efficient and cost solar cells.
It is used to produce near-infrared laser diodes.
It is also used as an oxidizing agent in industries.
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