
1. Draw a neat diagram representing electromagnetic waves propagating along the z-axis.
2. Distinguish between p-type semiconductor and n-type semiconductor.
3. A bar magnet of magnetic moment 5.0A${m^2}$ has the pole 20cm apart. Calculate the pole strength.
Answer
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Hint: The question has three parts we will first make a diagram of wave having electric and magnetic field lines perpendicular to each other and then distinguishing between p-type having holes as majority charge carriers and n-type as electron majority charge carriers and then calculating the pole strength which is the divide of magnetic moment with the distance between poles.
Complete step by step solution:
Step 1:
We are given three question and we are going to solve it one by one
Neat diagram representing electromagnetic waves propagating along z-axis.
These are the electromagnetic waves propagating along the z-axis direction in a sinusoidal wave form.
The arrows are the electric and magnetic fields which are perpendicular with each other.
Step 2:
Distinguish between p-type and n-type
Step 3:
A bar magnet of magnetic moment 5.0A${m^2}$ has the pole 20cm apart. Calculate the pole strength
The magnetic moment is defined as the product of pole strength and distance between the poles.
This implies the pole strength =$\dfrac{{magnetic{\text{ }}moment{\text{ }}}}{{distance{\text{ }}between{\text{ }}poles}}$ …….. (1)
The magnetic moment given is 5 A${m^2}$ and distance between poles is 20 cm or 0.2 m
Substituting in (1) we get, the pole strength=$\dfrac{5}{{0.2}}$ , this gives 25 A${m^{ - 2}}$
Hence, the pole strength is 25$A{m^{ - 2}}$
Note:
Semiconductors are especially made up of germanium and silicon because they have free electrons in their outer shell and hence offer conductivity. Germanium at a given temperature offers more free electrons than silicon. That’s why they are widely used in transistors and other electronic devices.
Complete step by step solution:
Step 1:
We are given three question and we are going to solve it one by one
Neat diagram representing electromagnetic waves propagating along z-axis.
These are the electromagnetic waves propagating along the z-axis direction in a sinusoidal wave form.
The arrows are the electric and magnetic fields which are perpendicular with each other.
Step 2:
Distinguish between p-type and n-type
| P-TYPE | N-TYPE |
| In P-type the holes are the majority charge carriers and electrons are the minority charge carriers. | In N-type it is opposite to the P-type. It has majority electrons carriers and holes are the minority charge carriers. |
| It is an extrinsic semiconductor which is obtained by doping trivalent impurity atoms such as boron, gallium, indium, etc. to the pure germanium or silicon semiconductors | It is an extrinsic semiconductor which is obtained by doping the impurity pentavalent impurity atoms such as antimony, arsenic etc. to the pure germanium or silicon semiconductors. |
| The impurity atoms added create vacancies of electrons (holes) in the structure and are called acceptor atoms. | The impurity atoms added, provide extra electrons in the structure, and are called donor atoms. |
Step 3:
A bar magnet of magnetic moment 5.0A${m^2}$ has the pole 20cm apart. Calculate the pole strength
The magnetic moment is defined as the product of pole strength and distance between the poles.
This implies the pole strength =$\dfrac{{magnetic{\text{ }}moment{\text{ }}}}{{distance{\text{ }}between{\text{ }}poles}}$ …….. (1)
The magnetic moment given is 5 A${m^2}$ and distance between poles is 20 cm or 0.2 m
Substituting in (1) we get, the pole strength=$\dfrac{5}{{0.2}}$ , this gives 25 A${m^{ - 2}}$
Hence, the pole strength is 25$A{m^{ - 2}}$
Note:
Semiconductors are especially made up of germanium and silicon because they have free electrons in their outer shell and hence offer conductivity. Germanium at a given temperature offers more free electrons than silicon. That’s why they are widely used in transistors and other electronic devices.
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